infrared led chip gaalas/gaa s 1. material substrate gaas (n type) epitaxial layer gaala s (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics forward voltage v f 1.55 1.6 v if=100ma reverse voltage v r 8 v ir=10ua power p o 17 22 mw if=100ma p 940 nm if=20ma ? 45 nm if=20ma note : power is measured by sorter e/t system with bare chip. 4. mechanical data (a) emission area -------------------------- - 11.0mil x 11.0mil (b) bottom area -------------------------- - 12.0mil x 12.0mil (c) bonding pad -------------------------- - 130um (d) chip thickness -------------------------- - 11mil (e) junction height -------------------------- - 6.7mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA9447 wavelength auk corp. (c) (a) (b) (e) (d) substrate
|
